HN8T25DEHKX077N/R
Stronger performance with latest V7 4D NAND combined with next-gen SoC
Fitted in a smaller and thinner package
智能手机、平板、嵌入式设备
● 容量：512GB
● 架构&接口：UFS 3.1
● 封装&包装：153‑Ball FBGA，11.0 × 13.0 × 0.8 mm，0.5mm
● 电压: VCC=2.5V；VCCQ=1.2V
● 温宽：‑25℃ ~ +85℃
● 关键特性：Write‑Booster、DeepSleep、Host Performance Throttling 通知，内置 DRAM 缓存，512Gb（V7‑TLC）
